Modeling SiO2 Ion Impurities Aging in Insulated Gate Power Devices Under Temperature and Voltage Stress

This paper presents a formal computational methodology to explain how the oxide in semiconductors degrades over time and the dependence of oxide degradation on voltage and temperature stresses. The effects of aging are modeled and quantified by modification of the gate-source capacitance value. The model output is validated using experimental results of a thermally aged power semiconductor device.

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Maintainer SCOTT POLL
Last Updated April 1, 2025, 03:00 (UTC)
Created April 1, 2025, 03:00 (UTC)
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identifier DASHLINK_866
issued 2013-12-18
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modified 2020-01-29
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