Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

Data and Resources

Additional Info

Field Value
Maintainer Christopher Teubert
Last Updated May 29, 2025, 20:34 (UTC)
Created March 31, 2025, 15:06 (UTC)
accessLevel public
bureauCode {026:00}
catalog_@context https://project-open-data.cio.gov/v1.1/schema/catalog.jsonld
catalog_@id https://data.nasa.gov/data.json
catalog_conformsTo https://project-open-data.cio.gov/v1.1/schema
catalog_describedBy https://project-open-data.cio.gov/v1.1/schema/catalog.json
harvest_object_id 9047a095-f32d-47e0-9f7d-6e4a9876fa8e
harvest_source_id 61638e72-b36c-4866-9d28-551a3062f158
harvest_source_title DNG Legacy Data
identifier https://data.nasa.gov/api/views/7wwx-fk77
issued 2022-11-22
landingPage https://data.nasa.gov/dataset/insulated-gate-bipolar-transistor-igbt-accelerated-aging
license https://www.usa.gov/government-works
modified 2022-11-22
programCode {026:021}
publisher PCoE
resource-type Dataset
source_datajson_identifier true
source_hash a85a365e96e1eaa69b913e64f5005d1063a8dd3cf88afd422d5475bb45c72851
source_schema_version 1.1
theme {"Raw Data"}